6-192 2 C 6 ghz cascadable gaas mmic amplifier technical data features ? cascadable 50 w gain block ? broadband performance: 2 C6 ghz 12.0 db typical gain 0.8 db gain flatness 12.0 dbm p 1 db ? single supply bias ? cost effective ceramic microstrip package MGA-64135 description the MGA-64135 is a high perfor- mance gallium arsenide monolithic microwave integrated circuit (mmic) housed in a cost effective, microstrip package. this device is designed for use as a general purpose 50 ohm gain block in the 2 to 6 ghz frequency range. typical 35 micro-x package typical biasing configuration c block v d rfc in 1 4 3 2 out mga applications include narrow and broadband if and rf amplifiers for commercial, industrial, and military requirements. this mmic is a cascade of two stages, each utilizing shunt feedback to establish a broadband impedance match. the source of each stage is ac grounded to allow biasing from a single positive power supply. the interstage blocking capacitor as well as a resistive self-bias network are included on chip. the die is fabricated using hps nominal .5 micron recessed schottky-barrier-gate, gold metallization and silicon nitride passivation to achieve excellent performance, uniformity, and reliability. 5965-9005e
6-193 MGA-64135 absolute maximum ratings absolute symbol parameter units maximum [1] v d device voltage v 12 p diss total power dissipation [2] mw 650 p in cw rf input power dbm +13 t ch channel temperature c 175 t stg storage temperature [3] c -65 to 175 notes: 1. operation of this device above any one of these parameters may cause permanent damage. 2. derate linearly at 8.3 mw/ c for t case > 103 c. 3. storage above +150 c may tarnish the leads of this package making it difficult to solder into a circuit. after a device has been soldered into a circuit, it may be safely stored up to 175 c. 4. the thermal resistance value is based on measurements taken with the device soldered to a 25 mil teflon pcb. 5. the small spot size of this technique results in a higher, though more accurate determination of q jc than do alternate methods. see measure- ments section for more information. thermal resistance: q jc = 150 c/w [4] ; t ch = 150 c liquid crystal measurement: 1 m m spot size [5] g p power gain (|s 21 | 2 ) f = 2 to 6 ghz db 10.0 12.0 d g p gain flatness f = 2 to 6 ghz db 1.20 gain variation vs. temperature f = 2 to 6 ghz db 0.5 t case = C25 c to +85 c input vswr f = 2 to 6 ghz 1.5:1 2.0:1 output vswr f = 2 to 6 ghz 1.4:1 2.0:1 p 1 db output power at 1 db gain compression f = 2 to 6 ghz dbm 10.0 12.0 nf 50 w noise figure f = 2 to 6 ghz db 7.5 reverse isolation (|s 21 | 2 ) f = 2 to 6 ghz db 35 i d device current ma 35 50 65 MGA-64135 electrical specifications, t a = 25 c symbol parameters and test conditions: v d = 10 v, z o = 50 w units min. typ. max. vswr
6-194 MGA-64135 typical performance , t a = 25 c MGA-64135 typical scattering parameters (z o = 50 w , t a = 25 c, v d = 10 v) freq. ghz mag ang db mag ang db mag ang mag ang 0.5 .27 C38 10.6 3.38 174 C31.0 .028 C13 .38 C41 1.0 .18 C44 12.9 4.42 C9 C33.1 .022 C20 .26 C48 2.0 .14 C67 14.3 5.21 C54 C34.9 .018 C19 .16 C59 3.0 .17 C91 14.5 5.33 C93 C37.1 .014 C21 .11 C75 4.0 .20 C105 14.2 5.11 C131 C37.8 .013 C15 .11 C71 5.0 .18 C114 13.6 4.79 C167 C37.3 .014 C10 .14 C57 6.0 .07 C162 12.8 4.35 157 C38.5 .012 C1 .17 C41 7.0 .15 96 11.8 3.89 123 C36.0 .016 3 .16 C42 8.0 .23 76 10.8 3.46 92 C34.3 .019 4 .10 C54 9.0 .32 63 9.5 2.98 63 C29.3 .034 12 .04 159 10.0 .43 52 8.6 2.68 38 C27.6 .041 C11 .09 116 s 11 s 21 s 12 s 22 0 6.0 8.0 2.0 4.0 10.0 0 4.0 6.0 2.0 8.0 frequency (ghz) frequency (ghz) figure 2. output power @ 1 db gain compression vs. frequency, v d = 10 v. 6 8 10 16 14 12 g p (db) 11 12 13 14 15 p 1 db (dbm) 2.0 6.0 4.0 8.0 frequency (ghz) 7.0 7.5 8.0 8.5 9.0 noise figure (db) figure 1. power gain vs. frequency, v d = 10 v. figure 3. noise figure vs. frequency, v d = 10 v. 0 6.0 8.0 2.0 4.0 10.0 frequency (ghz) input 1.0:1 1.2:1 1.4:1 2.0:1 1.8:1 1.6:1 vswr figure 4. vswr vs. frequency, v d = 10 v. output
6-195 13 4 2 ground dia. ground rf output rf input .085 2.15 641 .083 2.11 .020 .508 .100 2.54 .455 .030 11.54 .75 .006 .002 .15 .05 notes: (unless otherwise specified) 1. dimensions are in 2. tolerances in .xxx = 0.005 mm .xx = 0.13 mm .022 .56 .057 .010 1.45 .25 35 micro-x package dimensions
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